Effect of Reduced Graphene Oxide Cap Layer on Electromigration Reliability of Cu Interconnect
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چکیده
منابع مشابه
Design tool and methodologies for interconnect reliability analysis in integrated circuits
Total on-chip interconnect length has been increasing exponentially with technology scaling. Consequently, interconnect-driven design is an emerging trend in state-ofthe-art integrated circuits. Cu-based interconnect technology is expected to meet some of the challenges of technology scaling. However, Cu interconnects still pose a reliability concern due to electromigration-induced failure over...
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Recent studies on Cu interconnects have shown that interface diffusion between Cu and the cap layer dominates mass transport for electromigration. The kinetics of mass transport by interface diffusion strongly depends on the material and processing of the cap layer. In this series of two papers, we report in Part I the interface and grain-boundary mass transport measured from isothermal stress ...
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تاریخ انتشار 2014